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2N5551 Transistor
Rs. 5.00
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Description
The 2N5551 is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is capable of handling collector-emitter voltages up to 160V, making it suitable for high-voltage signal circuits, switching applications, driver stages, power supplies, and audio equipment. The transistor is commonly supplied in a TO-92 through-hole package and is widely used in consumer electronics and DIY projects.
- Transistor Type: NPN Bipolar Junction Transistor (BJT)
- Collector-Emitter Voltage (VCEO): 160V
- Collector-Base Voltage (VCBO): 180V
- Emitter-Base Voltage (VEBO): 6V