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MDP10N055 N-Channel Power MOSFET – 100V 120A 5.5mΩ TO-220 Transistor
MDP10N055 N-Channel Power MOSFET – 100V 120A 5.5mΩ TO-220 Transistor
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The MDP10N055 is a high-current N-Channel power MOSFET designed for efficient switching and power-control applications. It is rated for up to 100V drain-source voltage and up to 120A drain current under specified conditions, with a low maximum RDS(on) of approximately 5.5mΩ.
Its low on-state resistance helps reduce conduction losses, while its fast switching capability makes it suitable for applications such as SMPS power supplies, DC motor control, battery systems, inverter circuits, DC-DC converters, LED power circuits, switching regulators and other high-current electronics projects.
The MDP10N055 is supplied in a TO-220 package, which is convenient for PCB mounting and allows the use of an external heatsink when required. The MOSFET is controlled through its gate terminal, making it useful as an electronic switch in power electronics and embedded-control applications.
This device is suitable for technicians, electronics hobbyists, repair professionals and developers working with high-current DC switching circuits.
Key Features
- N-Channel power MOSFET
- Drain-source voltage up to 100V
- Drain current up to 120A under specified conditions
- Low RDS(on): approximately 5.5mΩ maximum
- Fast switching performance
- TO-220 through-hole package
- Suitable for high-current switching
- Useful for SMPS, inverter and motor-control applications
- Can be heatsink mounted for thermal management
Specifications
| Specification | Details |
|---|---|
| Product Type | Power MOSFET |
| Part Number | MDP10N055 |
| Channel Type | N-Channel |
| Drain-Source Voltage VDS | 100V Max |
| Continuous Drain Current ID | Up to 120A |
| Gate-Source Voltage VGS | ±20V Max |
| RDS(on) | Approx. 5.5mΩ Max |
| Gate Threshold Voltage | Up to approx. 4V |
| Maximum Power Dissipation | Approx. 188W under specified conditions |
| Maximum Junction Temperature | 175°C |
| Total Gate Charge | Approx. 78nC |
| Package | TO-220 |
| Mounting Type | Through Hole |
| Device Type | Discrete MOSFET |
| Main Applications | Switching, motor control, SMPS, inverter, DC-DC converter |
| Quantity | 1 Piece |
The published specifications for the MDP10N055 include 100V VDS, 120A ID and 5.5mΩ maximum RDS(on); actual allowable current in a real circuit depends strongly on gate drive, PCB design, heatsinking and operating temperature.
Note: Do not design a circuit assuming the full 120A rating is continuously available without suitable thermal management. Always verify the exact manufacturer's datasheet and safe operating area for critical or high-power applications.
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