IRF540 MOSFET

IRF540 MOSFET 

General Specifications:

• Type: N-channel MOSFET
• Drain-Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 33A
• Gate-Source Voltage (Vgs): ±20V
• Rds(on): 0.044Ω (maximum)
• Power Dissipation (Pd): 150W
• Operating Temperature Range: -55°C to 175°C

Package:

• Package Type: TO-220
• Pin Configuration:
  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)
  • Tab: Drain (D)

Key Features

• High Current Handling: Can handle up to 33A, suitable for high-power applications.
• Low Rds(on): Low on-state resistance, leading to high efficiency and minimal power loss.
• Fast Switching Speed: Suitable for high-frequency applications.
• Robust Thermal Performance: Capable of dissipating significant power with proper heat sinking.